发明名称 Method And Circuit To Generate Race Condition Test Data At Multiple Supply Voltages
摘要 A method and circuit for characterizing a process variation of a semiconductor die is disclosed. In a particular embodiment, the method includes operating a circuit at multiple supply voltage levels to generate race condition testing data. The circuit is disposed on at least one die of a wafer and includes at least one racing path circuit having at least two paths. The method further includes collecting the race condition testing data and evaluating the collected race condition testing data. The race condition testing data is correlated to a process variation of the at least one die.
申请公布号 US2011245948(A1) 申请公布日期 2011.10.06
申请号 US20100749602 申请日期 2010.03.30
申请人 QUALCOMM INCORPORATED 发明人 BAI XIAOLIANG;ZHANG XIAONAN
分类号 G06F19/00;G06F17/30;H01L21/77;H03H11/26 主分类号 G06F19/00
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