发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state. |
申请公布号 |
KR20110108673(A) |
申请公布日期 |
2011.10.06 |
申请号 |
KR20100028011 |
申请日期 |
2010.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KI JOON |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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