NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device which prevents erroneous writing.SOLUTION: The non-volatile semiconductor memory device includes: a first block which has a first selection gate SGD and a first word line WL31 adjacent to one of the first selection gate SGD; a second block that has a second selection gate SGD adjacent to the other of the first selection gate across a contact wiring DC connected to a bit line and a second word line WL 31 which is adjacent to the second selection gate and to which the same number as that for the first word line is assigned, and is arranged adjacent to the first block; a storage circuit 20 that stores first and second data on voltages applied to the first and second selection gates; and a control circuit 8 that controls the voltages applied to the first and second selection gates. The control circuit applies a first voltage to the first selection gate based on the first data upon writing operation, and applies a second voltage which is different from the first voltage to the second selection gate based on the second data.