| 摘要 |
PROBLEM TO BE SOLVED: To provide inexpensive material which carries a semiconductor layer used for a schottky diode device exhibiting good rectification characteristics.SOLUTION: The n-semiconductor carrying electrode material for a diode is formed by integrating a base material of an Fe-Cr based alloy in which Cr content is 10.5-32.0 mass% and a surface oxide coating formed by heating the base material in an oxidizing atmosphere. When a thickness of the oxide coating is defined to be a depth in terms SiOconcentration corresponding to a depth position where an oxygen concentration is 1/2 of a maximum oxygen concentration in a depth direction analysis from an oxide coating surface by an AES, the oxide coating is an n-type semiconductor with a thickness of 17-50 nm, and is integrated with the base material by ohmic junction by forming a trivalent Cr thickened area, a Cr deficient part, and a metal Cr thickened area sequentially from the coating surface side. |
