SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase a semiconductor substrate which is superior in electric characteristics such as channel mobility, and a method of manufacturing the same.SOLUTION: The semiconductor device has a substrate 2 which has a principal surface 2A having an off angle of -3 to +5° to a (0-33-8) plane in a <01-10> direction and made of silicon carbide, a p-type layer 4 formed on the principal surface 2A of the substrate 2 through epitaxial growth and made of silicon carbide, and an oxide film 8 formed in contact with a surface of the p-type layer 4. Then a maximum value of nitrogen atom concentration in a region which is ≤10 nm away from an interface between the p-type layer 4 and oxide layer 8 is ≥1×10cm.