发明名称 STRESS LAYER STRUCTURE
摘要 A stress layer structure includes an active stress portion and a dummy stress portion, both formed of a stress material and disposed on the substrate. The active stress portion includes first and second active stress patterns in a region where active devices are formed. The first and second active stress patterns coverrespective active regions, and are separated from each other. The dummy stress portion includes a first dummy stress pattern formed directly on the substrate and disposed between and separated from the first and second active stress patterns.
申请公布号 US2011241212(A1) 申请公布日期 2011.10.06
申请号 US201113150341 申请日期 2011.06.01
申请人 UNITED MICROELECTRONICS CORP. 发明人 YANG CHIN-SHENG;LIU CHIH-CHIEN
分类号 H01L23/522 主分类号 H01L23/522
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