发明名称 TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING TRANSPARENT CONDUCTIVE FILM
摘要 <p>A base material is provided, on at least one surface, with a gas barrier layer and a transparent conductive film, wherein: the gas barrier layer is configured from a material which at least contains oxygen atoms, nitrogen atoms, and silicon atoms; the surface layer of the gas barrier layer has an oxygen atom abundance of 60 to 75%, a nitrogen atom abundance of 0 to 10%, and a silicon atom abundance of 25 to 35% in relation to the total abundances of the oxygen, nitrogen and silicon atoms; and the surface layer of the gas barrier layer has a film density of 2.4 to 4.0g/cm3.</p>
申请公布号 WO2011122497(A1) 申请公布日期 2011.10.06
申请号 WO2011JP57459 申请日期 2011.03.25
申请人 LINTEC CORPORATION;NAGAMOTO, KOICHI;KONDO, TAKESHI;SUZUKI, YUTA;IWAYA, WATARU;NAGANAWA, SATOSHI 发明人 NAGAMOTO, KOICHI;KONDO, TAKESHI;SUZUKI, YUTA;IWAYA, WATARU;NAGANAWA, SATOSHI
分类号 B32B9/00;C23C14/48;C23C14/58;H01B5/14;H01B13/00 主分类号 B32B9/00
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