| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming apparatus in which a reaction gas is efficiently used when forming an SiC (silicon carbide) film and which realizes the film with high film thickness uniformity and quality.SOLUTION: A film forming chamber 1 of a film forming apparatus 50 includes: a first gas supply passage 4 for a first reaction gas 25 containing a silicon source gas; a second gas supply passage 14 for a second reaction gas 26 containing a carbon source gas; a liner 2 which has a head part 31 with a cross section smaller than that of a body 30 on which a semiconductor substrate 6 is put, and covers a film forming chamber 1 inner wall. The first gas supply passage 4 consists of an inner tube and an outer pipe, the tip extends to a semiconductor substrate 6 proximity, and enables it to supply the first reaction gas 25 to the inner tube while supplying a hydrogen gas to the outer pipe. In addition, the second reaction gas 26 supplied to the head part 31 of the liner 2 from the second gas supply passage 14 is made to flow down to be mixed with the first reaction gas 25 on a surface of the semiconductor substrate 6 and to be made to form the SiC film on the semiconductor substrate 6 surface. |
