| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of achieving a high S/N.SOLUTION: The solid-state imaging device 100 has a photodiode 105, a transfer transistor 106, a floating diffusion 110, a floating diffusion wiring 111, an amplification transistor 107, a power supply line 112, and a first output signal line 109. The first output signal line 109 is formed on both sides, interposing the floating diffusion wiring 111 in the same layer as a layer in which the floating diffusion wiring 111 on a semiconductor substrate is formed. The power supply line 112 is formed over the floating diffusion wiring 111. |
