发明名称 |
METHOD FOR INTEGRATING LOW-K DIELECTRICS |
摘要 |
<p>A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.</p> |
申请公布号 |
WO2011123373(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
WO2011US30133 |
申请日期 |
2011.03.28 |
申请人 |
TOKYO ELECTRON LIMITED;LIU, JUNJUN;TOMA, DOREL, I.;YUE, HONGYU;FAGUET, JACQUES |
发明人 |
LIU, JUNJUN;TOMA, DOREL, I.;YUE, HONGYU;FAGUET, JACQUES |
分类号 |
H01L21/00;H01L21/02;H01L21/263;H01L21/311 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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