FILM FORMATION METHOD, AND PLASMA FILM FORMATION APPARATUS

摘要

Disclosed is a film formation method which can form a thin film on an object that has, formed on the surface thereof, an insulating layer having a depressed portion.  The method is characterized by comprising the following steps: a thin film formation step of forming a thin titanium nitride film on the surface of the object including the surface in the depressed portion by a plasma CVD technique; and a nitriding step of subjecting the thin film to a nitriding process using plasma in the presence of a nitrogen gas to nitride the thin film.