发明名称 MULTILAYER CRUCIBLE FOR CASTING SILICON INGOT AND METHOD FOR MANUFACTURING THE CRUCIBLE
摘要 <p>Disclosed is a multilayer crucible for casting a silicon ingot, which can suppress mixing of oxygen in the silicon ingot. Also disclosed is a method for manufacturing the multilayer crucible. The multilayer crucible (1) for casting the silicon ingot is provided so as to manufacture the silicon ingot by melting and casting a silicon raw material, and the crucible is provided with a silica layer (3), which is provided on the inner side of a casting mold (2), and a barium coating layer (4), which is provided on the surface of the silica layer (3).</p>
申请公布号 WO2011122585(A1) 申请公布日期 2011.10.06
申请号 WO2011JP57708 申请日期 2011.03.28
申请人 MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.;WAKITA SABURO;TSUZUKIHASHI KOJI;IKEDA HIROSHI;KANAI MASAHIRO 发明人 WAKITA SABURO;TSUZUKIHASHI KOJI;IKEDA HIROSHI;KANAI MASAHIRO
分类号 C01B33/02;C30B29/06 主分类号 C01B33/02
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