HETERO-SUBSTRATE, III-NITRIDE SEMICONDUCTOR DEVICES USING THE SAME AND MANUFACTURING METHOD OF THEREOF,申请号KR20100029342-传众专利搜索

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发明名称	HETERO-SUBSTRATE, III-NITRIDE SEMICONDUCTOR DEVICES USING THE SAME AND MANUFACTURING METHOD OF THEREOF
摘要
申请公布号	KR20110109557(A)	申请公布日期	2011.10.06
申请号	KR20100029342	申请日期	2010.03.31
申请人	KOREA ELECTRONICS TECHNOLOGY INSTITUTE	发明人	BAIK, KWANG HYEON;HWANG, SUNG MIN;SEO, YONG GON;YOON, HYUNG DO;PARK, JAE HYOUN
分类号	H01L21/86	主分类号	H01L21/86
代理机构		代理人
主权项
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