| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improved in carrier mobility owing to effective strain of a channel region by a stress liner film, and to provide a method of manufacturing the same.SOLUTION: The semiconductor device 100 includes a semiconductor substrate 2 with a groove 12 having an element separation pattern, a side wall 10 formed on a side surface of the groove 12, a MOSFET (metal-oxide semiconductor field effect transistor) 3 formed in a region surrounded by the groove 12 in the semiconductor substrate 2 and having a channel region 8 in the semiconductor substrate 2, and the stress liner film 11 successively formed on the MOSFET 3 and the side wall 10 in the groove 12 and generating strain in the channel region 8. |
