| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device which has a FIN type transistor comprising a FIN type semiconductor portion by suppressing characteristic variance of the FIN type transistor by making small a difference in impurity concentration between an upper surface and a side surface of the FIN type semiconductor portion.SOLUTION: A pad insulating film 3 of approximately 2 to 5 nm in thickness is formed on the upper surface of the FIN type semiconductor portion 10, and cluster ions are implanted in one side surface of the FIN type semiconductor portion 10 obliquely at a first implantation angle θ1 and then in the other side surface of the FIN type semiconductor portion 10 thereafter obliquely at a second implantation angle θ2 symmetrically with the first implantation angle θ1. The cluster ions implanted in the FIN type semiconductor portion 10 are activated thereafter to form a diffusion region that constitutes parts of a source region and a drain region. |
