| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device easy in downsizing and improved in mass-productivity, and a method of manufacturing the same.SOLUTION: In the method of manufacturing the semiconductor device and the semiconductor device, a laminate having a light emitting layer is formed so that its first surface is adjacent to a first surface of a translucent substrate, an insulating film with first and second openings is formed on a p-side electrode and an N-side electrode disposed on the second surface side opposite to the first surface of the laminate on the second surface side, a seed metal is formed to cover the insulating film and the first and second openings, a p-side metal wiring layer and an n-side metal wiring layer are formed on the seed metal, a p-side metal pillar and an n-side metal pillar are respectively formed on the p-side metal wiring layer and the n-side metal wiring layer, the seed metal exposed between the p-side metal wiring layer and the n-side metal wiring layer is removed to separate it into a p-side seed metal and an n-side seed metal, a resin is at least partially formed in a space with the seed metal removed, and a phosphor layer is formed on the first surface side of the laminate with the light emitting layer. |
