| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device suppressing parasitic capacitance, and to provide a method of manufacturing the same.SOLUTION: The device includes: a laminated structure ML having a plurality of electrode films WL and a plurality of inter-electrode dielectrics 14 alternately laminated in a first direction; a semiconductor pillar SP penetrating through the laminated structure ML in the first direction; a memory unit MU having a charge storage film 48 interposed between each of the plurality of electrode films WL and the semiconductor pillar SP, an inner insulating film 42 interposed between the charge storage film 48 and the semiconductor pillar SP, and an outer insulating film 43 interposed between each of the electrode films VL and the charge storage film 48; and a non-memory unit PR10 juxtaposed with the memory unit MU in a second direction orthogonal to the first direction, and having an insulating unit 50 disposed at the same position as at least one electrode film WL of the laminated structure ML in the first direction. |
