发明名称 |
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17. |
申请公布号 |
US2011241016(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US201013054037 |
申请日期 |
2010.06.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KYONO TAKASHI;ENYA YOHEI;YOSHIZUMI YUSUKE;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;ADACHI MASAHIRO;TOKUYAMA SHINJI |
分类号 |
H01L33/16;H01L33/30 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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