SEMICONDUCTOR DEVICE AND METHOD OF FORMING A STRUCTURE IN A TARGET SUBSTRATE FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A semiconductor device and a method of forming a structure in a target substrate for manufacturing a semiconductor device is provided. The method comprises the step of providing a masking layer (120) on the target substrate (110) and providing a stair-like profile (122) in the masking layer such that the height of a step of the stair-like profile is smaller than the thickness of the masking layer. Further, the method comprises the step of performing anisotropic etching of the masking layer and the target substrate simultaneously such that a structure having a stair-like profile (124) is formed in the target substrate. The semiconductor device comprises a target substrate including a first region made of a first type of semiconductor material and a second region made of a second type of semiconductor material. The first and second types of semiconductor material are different and the first and second regions are adjacent for forming an active region of the semiconductor device. At the junction between the first and second regions, the semiconductor device comprises a structure having a stair-like profile. The present invention is advantageous in that it provides a semiconductor device with improved characteristics.