| 摘要 |
A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 μm. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process. |
