| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an impurity layer suppressing generation of a potential dip.SOLUTION: The method has steps of: exposing a resist material 9 applied on a semiconductor substrate 8 by using a grating mask 1, which comprises a first region 2-1 composed of a plurality of dot patterns 3 and a second region 2-2 adjoining to the first region 2-1 and composed of a plurality of dot patterns 4 having a larger area than the pattern of the region 2-1, with the transmittance for light discontinuously changing in the boundary between the regions 2-1 and 2-2, wherein a dot pattern 6 having a medium area between the above dot patterns is disposed between the dot pattern 3 of the first region 2-1 and the dot pattern 4 of the second region 2-2; forming a resist film 10 by developing the exposed resist material 9; and forming an impurity layer 11 by injecting ions into the semiconductor substrate 8 by using the resist film as a mask. |
