发明名称 |
ESD PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection circuit appropriately operating to a chip terminal in which a signal voltage exceeds a power supply voltage in both positive and negative directions.SOLUTION: An ESD protection circuit includes: a PNPN junction in which a P-side of one end is connected to a terminal and an N-side of another end is connected to ground; and a PMOS transistor in which a source and a gate are connected to an N-side of a PN junction having a P-side connected to ground and a drain is connected to the terminal. |
申请公布号 |
JP2011199058(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100064979 |
申请日期 |
2010.03.19 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
OTA KAZUTOSHI;HASHIMOTO KENJI |
分类号 |
H01L27/06;H01L21/822;H01L27/04;H01L29/74 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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