发明名称 ESD PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ESD protection circuit appropriately operating to a chip terminal in which a signal voltage exceeds a power supply voltage in both positive and negative directions.SOLUTION: An ESD protection circuit includes: a PNPN junction in which a P-side of one end is connected to a terminal and an N-side of another end is connected to ground; and a PMOS transistor in which a source and a gate are connected to an N-side of a PN junction having a P-side connected to ground and a drain is connected to the terminal.
申请公布号 JP2011199058(A) 申请公布日期 2011.10.06
申请号 JP20100064979 申请日期 2010.03.19
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 OTA KAZUTOSHI;HASHIMOTO KENJI
分类号 H01L27/06;H01L21/822;H01L27/04;H01L29/74 主分类号 H01L27/06
代理机构 代理人
主权项
地址