发明名称 SILICON NANOWIRE COMPRISING HIGH DENSITY METAL NANOCLUSTERS AND METHOD OF PREPARING THE SAME
摘要 A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
申请公布号 US2011240954(A1) 申请公布日期 2011.10.06
申请号 US201113076957 申请日期 2011.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD.;DONGGUK UNIVERSITY-ACADEMIC COOPERATION FOUNDATION 发明人 PARK GYEONG-SU;SONG IN-YONG;HEO SUNG;KWAK DONG-WOOK;CHO HOON YOUNG;KIM HAN-SU;CHOI JAE-MAN;KWON MOON-SEOK
分类号 H01L29/12;B82Y40/00;B82Y99/00;H01L21/20 主分类号 H01L29/12
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