PRODUCTION METHOD FOR SEMICONDUCTOR SINGLE CRYSTAL

摘要

Disclosed is a semiconductor single crystal production method for producing a semiconductor single crystal in which the occurrence of defects is suppressed. Said production method involves a step for forming a boron oxide film (31) on the inner wall of a growing container (10) that has a bottom section and a body section connecting to said bottom section, a step for bringing a silicon oxide-containing boron oxide melt into contact with the boron oxide film (31) to form a silicon oxide-containing boron oxide film (32) on the inner wall of the growing container (10), a step for forming a starting material melt (34) upon a seed crystal (20) disposed on the bottom section within the growing container (10), and a step for growing a semiconductor single crystal by solidifying the starting material melt (34) from the seed crystal (20) side.