| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment method providing a crystalline silicon substrate which extends the lifetime of a carrier, and also to provide a method for manufacturing a solar cell having improved characteristics by using the crystalline silicon substrate.SOLUTION: A reactive gas containing a phosphine gas and a hydrogen gas is allowed to contact a heated catalyst to generate radicals, and the radicals are supplied to a substrate 51 to be processed made of a crystalline silicon to execute surface treatment of the substrate 51. An ndope layer 52 containing doped phosphor is formed on the substrate 51 which has subjected to the treatment. Then, a silicon nitride film 53 is formed on the ndope layer 52. Thus, the service life of the carrier on an interface between the substrate 51 and the silicon nitride film 53. A solar cell 50 having the improved characteristics by using the substrate 51 is provided. |
