| 摘要 |
PROBLEM TO BE SOLVED: To provide an accurate plasma etching method suppressing a damage on a device by developing a plasma treatment method using a non-greenhouse effect gas to achieve global environmental protection and improvement of performance of a plasma process.SOLUTION: In this plasma treatment method, a treatment gas being fluorine gas (F) of 100 volume% is supplied to a plasma generation chamber, plasma is generated by alternately repeating application of a high-frequency electric field and stop of the application, and a substrate is irradiated with the plasma to perform substrate treatment. Alternatively, from the plasma, negative ions or positive ions are individually extracted, both of them are alternately extracted, or only the negative ions are selectively extracted to be neutralized, thereby a neutral particle beam is generated, and the substrate treatment may be performed by irradiating the substrate with the neutral particle beam. |
