| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving amplification factor, while assuring the breakdown voltage for the gate.SOLUTION: The semiconductor device 10 includes a channel layer 13 and a gate electrode 19. The device additionally includes, between the channel layer 13 and the gate electrode 19, a spacer layer 14 arranged on the channel layer 13, an electron supply layer 15 arranged on the spacer layer 14 and a barrier layer 16 arranged on the electron supply layer 15. Energy level Ec1 at the lower end of a conduction band of the spacer layer 14 is lower than energy level Ec2 at the lower end of the conduction band of the electron supply layer 15, while energy level Ec3 at the lower end of the conduction band of the barrier layer 16 is higher than the energy level Ec2 at the lower end of the conduction band of the electron supply layer 15. |
