SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that has a plurality of capacitors with different characteristics without exposing a surface of a ferroelectric film to a resist.SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming an insulating film over a substrate; forming a lower electrode layer over the insulating film; forming the ferroelectric film on the lower electrode layer; forming a first upper electrode layer on the ferroelectric film; forming a first resist covering a first region on the first upper electrode layer; removing the first upper electrode layer in a second region by etching using the first resist as a mask and also shaving the ferroelectric film in the second region; forming a second upper electrode layer on the first upper electrode layer in the first region and on the ferroelectric film not in the first region; forming a second resist in the first region and the second region; and forming a first capacitor and a second capacitor by etching the first upper electrode layer, the second upper electrode layer, the ferroelectric film, and the lower electrode layer through the second resist as a mask.