| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES |
| 摘要 |
A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film by using a second reaction gas; and performing a second post-treatment on the thin film by using a second source gas.
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| 申请公布号 |
US2011244673(A1) |
申请公布日期 |
2011.10.06 |
| 申请号 |
US20100938806 |
申请日期 |
2010.11.03 |
| 申请人 |
CHO JIK-HO;YEOM SEUNG-JIN;HONG SEUNG-HEE;LEE NAM-YEAL |
发明人 |
CHO JIK-HO;YEOM SEUNG-JIN;HONG SEUNG-HEE;LEE NAM-YEAL |
| 分类号 |
H01L21/28;H01L21/768 |
主分类号 |
H01L21/28 |
| 代理机构 |
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