| 摘要 |
In sophisticated semiconductor devices, electronic fuses may be provided on the basis of a replacement gate approach by using the aluminum material as an efficient metal for inducing electromigration in the electronic fuses. The electronic fuse may be formed on an isolation structure, thereby providing an efficient thermal decoupling of the electronic fuse from the semiconductor material and the substrate material, thereby enabling the provision of efficient electronic fuses in a bulk configuration, while avoiding incorporation of fuses into the metallization system.
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