| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate which has various superior characteristics of luminance, life etc., and excellent quality, and to provide a light emitting element, a method of manufacturing the compound semiconductor substrate, and a method of manufacturing the light emitting element.SOLUTION: The compound semiconductor substrate has at least a double-hetero-structure sequentially formed of a GaAs buffer layer, and (AlGa)InP (where 0<x<1, 0<y<1) on a GaAs substrate. A thickness of the GaAs buffer layer is 0.5 μm or more. |
