| 摘要 |
PROBLEM TO BE SOLVED: To provide a power cycle life prediction method, a life prediction device, and a semiconductor device including the life prediction device for predicting a life with high accuracy by eliminating a rounding error factor.SOLUTION: The device is constituted of: a temperature sensor 10 for detecting a copper base temperature of an IGBT module; an A/D converter 20 for A/D converting the temperature sensor output in a constant sampling period; a life arithmetic circuit 30; and a life data register 40. The life arithmetic circuit 30 detects a temperature difference from A/D converter output, compares the detected temperature difference with an inflection point temperature difference preliminarily kept, performs life calculation, by receiving an operation parameter stored in a life data register 40, on an inclination of a line approximated in accordance with which side of a plurality of lines approximating a power cycle life curve analyzed preliminarily through a power cycle test the temperature difference detected from the comparison results is present and a base temperature difference preliminarily set on the line, and outputs life information. The life data register 40 stores the operation parameter for performing the life calculation in the life arithmetic circuit 30. |
