| 摘要 |
PROBLEM TO BE SOLVED: To enhance the reliability of a semiconductor device, concerning a method for manufacturing the semiconductor device and its manufacturing method.SOLUTION: The semiconductor device includes: a silicon substrate 20; an interlayer dielectric 38 formed over the silicon substrate 20; a plurality of fuses 41a, 41b formed on the interlayer dielectric 38 at mutual intervals; a dummy pattern 41x formed on the interlayer dielectric 38 and between the adjacent fuses 41a, 41b; and a passivation film 48 covering at least part of the fuses 41a, 41b and the dummy pattern 41x, and having a coating type insulating film 46 and a silicon nitride film 47 in sequence from under. |
