| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device, a dry etching method and a plasma controller such that etching processing can be performed in an optimum plasma state wherein etching damage to an etching mask as well as a material to be etched is taken into consideration.SOLUTION: The dry etching device, which performs dry etching on the material to be etched, is configured to detect plasma light emission spectrum data on an etching gas reacting with the material to be etched and plasma light emission spectrum data on an etching gas reacting with the etching mask during the etching processing, operate and store the detected plasma light emission spectrum data of the etching gases, and perform feedback control (to etch a dummy substrate before processing the material to be etched and to adjust high-frequency electric power or a gas flow rate so as to satisfy the operated and stored data) for the etching device based on the operated and stored data. |
