| 摘要 |
PROBLEM TO BE SOLVED: To attain high detection sensitivity and tolerance to noise although a pixel circuit is basically a one-transistor type.SOLUTION: A solid-state imaging device includes a semiconductor substrate 100, a detection transistor 11, and a load transistor 12. The semiconductor substrate has a pixel-isolated charge accumulation region on a side irradiated with light from a rear surface. When, for example, the resistance value of the load transistor 12 is varied in a state wherein an operating voltage Vin is applied to a control node which controls a channel, the detection transistor 11 varies an output line potential in timing corresponding to an accumulated charge amount in the charge accumulation region 101 according as the load resistance is varied. |
