BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME
摘要
Methods of forming semiconductor structures include transferring a portion (116a) of a donor structure to a processed semiconductor structure (102) that includes at least one non-planar surface. An amorphous film (144) may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may be planarized to form one or more planarized surfaces. Semiconductor structures include a bonded semiconductor structure having at least one non-planar surface, and an amorphous film disposed over the at least one non-planar surface. The bonded semiconductor structure may include a processed semiconductor structure and a portion of a single crystal donor structure attached to a non-planar surface of the processed semiconductor structure.
申请公布号
WO2011123199(A1)
申请公布日期
2011.10.06
申请号
WO2011US25647
申请日期
2011.02.22
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;MAZURE, CARLOS;NGUYEN, BICH-YEN;SADAKA, MARIAM