CONTROLLING FERROELECTRICITY IN DIELECTRIC FILMS BY PROCESS INDUCED UNIAXIAL STRAIN
摘要
<p>A method of controlling ferroelectric characteristics of integrated circuit device components includes forming a ferroelectrically controllable dielectric layer over a substrate; and forming a stress exerting structure proximate the ferroelectrically controllable dielectric layer such that a substantially uniaxial strain is induced in the ferroelectrically controllable dielectric layer by the stress exerting structure; wherein the ferroelectrically controllable dielectric layer comprises one or more of: a ferroelectric oxide layer and a normally non-ferroelectric material layer that does not exhibit ferroelectric properties in the absence of an applied stress.</p>
申请公布号
WO2011123238(A1)
申请公布日期
2011.10.06
申请号
WO2011US28422
申请日期
2011.03.15
申请人
INTERNATIONAL BUSINESS MACHINES CORP.;DUBOURDIEU, CATHERINE A.;FRANK, MARTIN M.