Producing optoelectronic device e.g. solar cell, comprises supplying substrate into coating chamber, supplying gas into coating chamber, generating plasma in gas by supply energy via to electrodes, and depositing material for layer

摘要

The method for producing an optoelectronic device including a layer, comprises providing a substrate (201) into a coating chamber (200), supplying a gas into the coating chamber, generating a plasma in the gas by supply energy via to electrodes (202), depositing a material for the layer on the substrate, and finishing the optoelectronic device. The layer is deposited in a chamber using plasma enhanced deposition process, in an optically active area (206) of the optoelectronic device and on the substrate with the deposition rate of = 350Å /minute. The method for producing an optoelectronic device including a layer, comprises providing a substrate (201) into a coating chamber (200), supplying a gas into the coating chamber, generating a plasma in the gas by supply energy via to electrodes (202), depositing a material for the layer on the substrate, and finishing the optoelectronic device. The layer is deposited in a chamber using plasma enhanced deposition process, in an optically active area (206) of the optoelectronic device and on the substrate with the deposition rate of = 350Å /minute, and deposited as an intrinsic layer and a boundary that is formed to a doped layer through the layer by an optoelectronic device and as an intrinsic microcrystalline silicon layer. The plasma is generated at a power density of = 0.4 w/cm 2>. The coating chamber has a deposition surface (208) of >= 1 m 2>. The substrate is placed between two electrodes so that the deposition surface is faced on one of the electrodes at a distance (= 10 mm) from the electrodes. The material for the intrinsic layer in a region removed from the boundary with other processing conditions is deposited as the material for a layer in the boundary region.