<p>A nanoscale switching device has an active region containing a switching material. The switching device has a first electrode and a second electrode with nanoscale widths, and the active region is disposed between the first and second electrodes. A protective cladding layer surrounds the active region. The protective cladding layer is formed of a cladding material unreactive to the switching material. An interlayer isolation layer formed of a dielectric material is disposed between the first and second electrodes and outside the protective cladding layer.</p>
申请公布号
WO2011123115(A1)
申请公布日期
2011.10.06
申请号
WO2010US29423
申请日期
2010.03.31
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;NICHEL, JANICE H.;RIBEIRO, GILBERTO MEDEIROS;YANG, JIANHUA