Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device

摘要

Methods are generally provided for forming a conductive oxide layer (14) on a substrate (12). In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (14) on a substrate (12) at a sputtering temperature from about 10° C to about 100° C. A cap layer (15) including cadmium sulfide can be deposited directly on the transparent conductive oxide layer (14). The transparent conductive oxide layer (14) can be annealed at an anneal temperature from about 450° C to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device (10). An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device (10).