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发明名称
CONTROLLED EDGE THICKNESS IN A SILICON WAFER
摘要
<p>중심 부근의 두께보다 더 크거나 더 작은 에지 부근 영역에서의 두께를 갖는 에피텍셜 실리콘 웨이퍼가 제공된다. 웨이퍼는 에지 두께를 제어하도록 에피텍셜층의 증착 동안 하나 이상의 공정 파라미터가 조정되는 방법에 의해 제조될 수 있다.</p>
申请公布号
KR101069293(B1)
申请公布日期
2011.10.05
申请号
KR20090008419
申请日期
2009.02.03
申请人
发明人
分类号
H01L21/20;H01L27/12
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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