发明名称 SEMICONDUCTOR DEVICES INCLUDING BIT LINE CONTACT PLUG AND BURIED CHANNEL ARRAY TRANSISTOR, METHODS OF FABRICATING THE SAME, AND SEMICONDUCTOR MODULES, ELECTRONIC CIRCUIT BOARDS AND ELECTRONIC SYSTEMS INCLUDING THE SAME
摘要 A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.
申请公布号 US2011241102(A1) 申请公布日期 2011.10.06
申请号 US201113072907 申请日期 2011.03.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO SUNG-IL;KIM NAM-GUN;KIM JIN-YOUNG;YOON HYUN-CHUL;KIM BONG-SOO;CHO KWAN-SIK
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
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