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发明名称
Method to control a crystallization behavior for low temperature-processed and solution-processable oxide semiconductor
摘要
<p>보다 구체적으로 저온 열처리를 통해서 결정상을 가지는 산화물 반도체를 제조하는 장점이 있으며, 결정화 반응 촉진을 위한 촉매나 자외선 및 다른 공정을 거치지 않고, 간단한 공정으로 결정화를 제어할 수 있는 장점이 있다.</p>
申请公布号
KR101069613(B1)
申请公布日期
2011.10.05
申请号
KR20090083346
申请日期
2009.09.04
申请人
发明人
分类号
H01L21/208;H01L21/324
主分类号
H01L21/208
代理机构
代理人
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