发明名称 Silicon nanowire comprising high density metal nanoclusters and method of preparing the same
摘要 A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
申请公布号 EP2372751(A1) 申请公布日期 2011.10.05
申请号 EP20110160698 申请日期 2011.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD.;DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION 发明人 PARK, GYEONG-SU;SONG, IN-YONG;HEO, SUNG;KWAK, DONG-WOOK;CHO, HOON-YOUNG;KIM, HAN-SU;CHOI, JAE-MAN;KWON, MOON-SEOK
分类号 H01L21/02;B82Y10/00;B82Y40/00;H01L29/06;H01L29/12;H01L29/16;H01L29/775 主分类号 H01L21/02
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