发明名称 |
Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
摘要 |
A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
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申请公布号 |
EP2372751(A1) |
申请公布日期 |
2011.10.05 |
申请号 |
EP20110160698 |
申请日期 |
2011.03.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
PARK, GYEONG-SU;SONG, IN-YONG;HEO, SUNG;KWAK, DONG-WOOK;CHO, HOON-YOUNG;KIM, HAN-SU;CHOI, JAE-MAN;KWON, MOON-SEOK |
分类号 |
H01L21/02;B82Y10/00;B82Y40/00;H01L29/06;H01L29/12;H01L29/16;H01L29/775 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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