| 摘要 |
The invention aims to provide an etching solution with which the removing performance of a seed crystal layer in the producing process of the substrate is high and undercuts are not easy to occur in the removing process of the seed crystal layer, and provide a producing method of a substrate using the etching solution. The etching solution includes a benzo triazole compound having nitro substituent, an organic amine compound, and copper having sulfuric acid and hydrogen peroxide. |
