发明名称 OXIDE THIN FILM AND METHOD OF FORMING THE OXIDE THIN FILM AND AN ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM
摘要 Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.
申请公布号 KR20110108064(A) 申请公布日期 2011.10.05
申请号 KR20100027347 申请日期 2010.03.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEON, JONG BAEK;RYU, MYUNG KWAN;PARK, KYUNG BAE;LEE, SANG YOON;KOO, BON WON
分类号 H01L21/31 主分类号 H01L21/31
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