| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a method for manufacturing the same, which can achieve high integration of pixels.SOLUTION: The solid-state imaging device includes a multilayer wiring layer, a semiconductor substrate, an impurity diffusion region of a second conductivity type, a color filter, and a metallic layer. The semiconductor substrate is provided on the multilayer wiring layer and includes a first conductivity type layer. The impurity diffusion region of the second conductivity type partitions the first conductivity type layer into a plurality of regions. The color filter is provided on the semiconductor substrate for each of the partitioned regions. The metallic layer is formed in a region of a lower surface of the semiconductor substrate except the partitioned regions. |
