发明名称 Light emitting diode
摘要 The present invention relates to a light emitting diode. According to the present invention, a structure capable of reducing total reflection of light, including micro-lenses or projections made of a material with a refractive index different from that of a semiconductor layer in the vicinity of an active layer, is formed within or on the surface of the semiconductor layer in the vicinity of an active layer so that light generated in an active layer of the light emitting diode can be efficiently extracted to enhance luminance.
申请公布号 EP1562238(A3) 申请公布日期 2011.10.05
申请号 EP20050290226 申请日期 2005.02.01
申请人 LG ELECTRONICS, INC. 发明人 JOHNGEON, SHIN
分类号 H01L33/00;H01L33/20;H01L33/32;H01L33/58 主分类号 H01L33/00
代理机构 代理人
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