发明名称 |
PRODUCTION METHOD FOR TANDEM SOLAR CELLS COMPRISING MICROCRYSTALLINE SILICON LAYERS |
摘要 |
<p>The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.</p> |
申请公布号 |
EP1706908(B1) |
申请公布日期 |
2011.10.05 |
申请号 |
EP20040816261 |
申请日期 |
2004.12.16 |
申请人 |
FORSCHUNGSZENTRUM JUELICH GMBH |
发明人 |
REPMANN, TOBIAS;RECH, BERND |
分类号 |
H01L31/18;C23C16/24;C23C16/509 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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