Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same

摘要

A zinc-blende nitride semiconductor free-standing substrate has a front surface and a back surface opposite the front surface. The distance between the front and back surfaces is not less than 200 μm. The area ratio of the zinc-blende nitride semiconductor to the front surface is not less than 95%.